Methods and apparatus for normalizing optical emission spectra

ABSTRACT

A processing system having a chamber for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra is provided. The processing chamber includes a confinement ring assembly, a flash lamp, and a set of quartz windows. The processing chamber also includes a plurality of collimated optical assemblies, the plurality of collimated optical assemblies are optically coupled to the set of quartz windows. The processing chamber also includes a plurality of fiber optic bundles. The processing chamber also includes a multi-channel spectrometer, the multi-channel spectrometer is configured with at least a signal channel and a reference channel, the signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

PRIORITY CLAIM

This continuation application claims priority under 37 CFR 1.53(b) ofand claims the benefit under 35 U.S.C. §120 to a commonly assignedpatent application entitled “METHODS AND APPARATUS FOR NORMALIZINGOPTICAL EMISSION SPECTRA”, Attorney Docket Number P1738/LMRX-P141,application Ser. No. 12/418,492 filed on Apr. 3, 2009, which claimspriority under 35 U.S.C. §119(e) to a commonly assigned provisionalpatent application entitled “Methods and Apparatus For NormalizingOptical Emission Spectra,” by Venugopal et al., Attorney Docket NumberP1738P/LMRX-P141P1, Application Ser. No. 61/042,011 filed on Apr. 3,2008, all of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

Advances in plasma processing have facilitated growth in thesemiconductor industry. During plasma processing, diagnostic tools maybe employed to ensure high yield of devices being processed. Opticalemission spectroscopy (OES) is often utilized as a diagnostic tool forgas-phase monitoring of etchants and etched products to maintain tightcontrol of process parameters.

In the optical interrogation of plasma, there is a characteristic glow,i.e., specific optical emission spectrum, associated with a plasmadischarge. Plasma discharge may have a spectral definition that may be afunction of multiple variables including, but not limited to,constituent species, pressure, energy density, driving power, and thelike. The spectrum, containing but not limited to deep ultra-violet (UV)through far infra-red (IR) wavelengths, may typically be observedemploying a single channel spectrometer.

Optical interrogation of plasma may be performed by collecting theoptical emission spectrum via a collimator through a quartz window of aplasma etch chamber. The spectral information, transmitted via acollector fiber optic bundle, may be measured by the signal channel of aspectrometer. With the spectral information from the opticalinterrogation, a considerable amount of information on constituentspecies may be collected and analyzed to provide guidance for processmonitoring and control during plasma processing. However, opticalinterrogation of plasma employing OES has mainly been limited toqualitative analysis.

Variability, in particular, may be the main limitation hindering OESfrom being employed for quantitative analyses in the opticalinterrogation of plasma in a manufacturing environment. For example,variability may be observed from system-to-system in a devicefabrication environment. System-to-system variability may manifest indifferences in the conditions between each plasma processing system. Inanother example, system-to-system variability may be observed betweenmeasurement systems, i.e., spectrometer to spectrometer. In yet anotherexample, system-to-system variability may be discerned in thedifferences in the setup of each distinct plasma processing system witheach distinct spectrometer. As can be appreciated by those skilled inthe art, variability from system-to-system in optical interrogation ofplasma during processing in a manufacturing environment may provide ahigh level of uncertainty limiting OES from being employed as aquantitative tool for plasma monitoring and/or control.

Another source of variability that may limit OES from being employed forquantitative analyses in a manufacturing environment may be variationwithin a system. For example, the efficiency of coupling the fiber-opticbundle to the plasma chamber and/or to the spectrometer may be a sourceof variability within the system.

In another example, the geometry and mechanics of the plasma chamber maylead to variability, e.g., in-situ measurement of plasma signals, withinthe system. Plasma processing typically employs a low pressure relativeto the atmosphere requiring a vacuum chamber. A window in thevacuum-chamber wall may need to be of a suitable material, e.g., thewindow may be constructed from quartz, to transmit in the desiredwavelength dependent attenuation along the optical path to measure theplasma spectral signal. However, pressure control in some plasmaprocessing system may employ a confinement ring setup which maypartially occlude the optical path between the plasma and thespectrometer. Furthermore, the confinement rings may move relative tothe interrogation window(s) depending on the desired plasma pressure andmay also experience deposition and/or etching. Thus, the occlusion ofthe optical path, the deposition, and/or the etching may inducevariability within the system making quantitative analysis employing OESimpractical.

Variability due to degradation of components as a function of time,i.e., time-to-time variation, may be yet another source of variationimpeding OES from being employed for quantitative analysis of plasmaprocesses. For example, the aforementioned quartz window may be exposedto plasma during plasma processing and may experience deposition and/oretching. Thus over time, the quartz window may cloud up and may changethe optical property of the window. Typically, clouding of the quartzwindow may result in lower plasma signal intensity in a nonlinearmanner. In another time-to-time variability example, a fiber opticbundle may degrade in optical transmission efficiency as a function oftime which may also result in lower plasma signal intensity in anonlinear manner. As may be appreciated from the foregoing, time-to-timevariability may provide yet another source of uncertainty limiting theOES from being employed as a quantitative tool.

In general, many of the variables that define plasma may be difficult toaccurately measure in-situ. Also, there may be significant fluctuationsat multiple time scales in plasma which may result in changes inspectral emission. Due to the variability associated with currentoptical interrogation of plasma employing OES, the task ofquantitatively determining what plasma variables may cause emissionchanges may be extremely difficult. Thus, the use of OES may be limitedto only qualitative applications such as end-point detection, leakidentification, species identification, and the like.

A potential solution may entail employing controls to standardize OES toreduce variability at each step in the process. For example,calibrations may be performed to reduce variation between systems and/orinstrument. Quartz windows may periodically be cleaned to reduceclouding. Fiber-optic bundles may be replaced to attain originaltransmission efficiency. Keyed connectors may be employed to mountoptical couplers the same way to reduce set-up variability:

However, calibrations and controls may be amenable to laboratoryenvironment but may not be conducive to a manufacturing environment. Inhigh volume manufacturing facilities which may fabricate devices withover a hundred manufacturing steps at high throughput, calibrations andcontrols after each step may be impractical. The calibrations ofuncontrolled variations and time related degradations may requirespecialized resources. Specialized resources may add cost to amanufacturing process that are extremely cost competitive. Carefulcalibrations and controls may add time overhead to processing timeincreasing the cost per device being manufactured and decreasingthroughput. Thus, the controls may reduce variability without addressingthe capability for quantitative OES measurements while penalizing theprocess with higher cost and lower throughput.

In view of the foregoing, there are desired methods and apparatus foremploying OES as a quantitative tool for process monitoring and controlduring plasma processing.

BRIEF SUMMARY OF THE INVENTION

The invention relates, in an embodiment, to an arrangement for in-situoptical interrogation of plasma emission to quantitatively measurenormalized optical emission spectra in a plasma chamber. The arrangementincludes a flash lamp and a set of quartz windows. The arrangement alsoincludes a plurality of collimated optical assemblies, which isoptically coupled to the set of quartz windows. The arrangement furtherincludes a plurality of fiber optic bundles, which comprises at least anillumination fiber optic bundle, a collection fiber optic bundle, and areference fiber optic bundle. The arrangement more over includes amulti-channel spectrometer, which is configured with at least a signalchannel and a reference channel. The signal channel is optically coupledto at least the flash lamp, the set of quartz windows, the set ofcollimated optical assemblies, the illuminated fiber optic bundle, andthe collection fiber optic bundle to measure a first signal.

The above summary relates to only one of the many embodiments of theinvention disclosed herein and is not intended to limit the scope of theinvention, which is set forth in the claims herein. These and otherfeatures of the present invention will be described in more detail belowin the detailed description of the invention and in conjunction with thefollowing figures.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 shows, in accordance with an embodiment of the invention, asimplified schematic of a normalized Optical Emission Spectroscopy (OES)setup in a typical plasma processing system for optical interrogation ofplasma.

FIG. 2 shows, in accordance with an embodiment of the invention, asimplified schematic of a first calibration setup employing a calibratedlight source.

FIG. 3 shows, in accordance with an embodiment of the invention, asimplified schematic of a second calibration setup employing a standardlight source.

FIG. 4 shows, in accordance with an embodiment of the invention, asimplified flowchart of a method for normalized OES measurements in realtime employing a signal channel.

FIG. 5 shows, in accordance with an embodiment of the invention, asimplified flowchart of a method for normalized OES measurements in realtime employing a multi-channel spectrometer.

DETAILED DESCRIPTION OF EMBODIMENTS

The present invention will now be described in detail with reference toa few embodiments thereof as illustrated in the accompanying drawings.In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art, that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process steps and/or structureshave not been described in detail in order to not unnecessarily obscurethe present invention.

In accordance with embodiments of the invention, there are providedmethods and arrangements for in-situ optical interrogation of plasmaemission to quantitatively measure normalized optical emission spectraacross multiple chambers. In an example, the in-situ measurements ofoptical collection efficiency may be performed by interrogating theoptical collection path in real time employing an external light sourcethrough diametrically opposite view ports in an embodiment.

In an embodiment, the normalized OES measurement system may beconfigured with an external light source, e.g., Xenon flash lamp. In anexample, the flash lamp may have a relatively short pulse width and/orhigh intensity signal. In an embodiment, a multi-channel spectrometermay be employed to simultaneously measure the emitted signals from aplasma processing chamber and/or the flash lamp output per pulse. Thus,the normalized OES system may allow for the measurements of opticalemission and/or optical collection efficiency to attain normalizedoptical emission spectra. In contrast, prior art OES measurement systemmay not be configured with an external light source and/or amulti-channel spectrometer.

In an embodiment, fixed coupling factors may be determined by employingoff-line calibration measurements. In an example, a calibration may beperformed employing a calibrated light source in an embodiment. Inanother embodiment, a calibration may be performed employing a standardlight source that may be measured by both the signal channel and/or thereference channel of the multi-channel spectrometer. These calibrationsmay be performed once at the spectrometer manufacturer, before shippingthe OES system, to determine the fixed coupling factors. Thus, thedevice manufacturer is not burdened with calibrations that may add costto the device fabrication process.

In the prior art, method for optical interrogation of plasma employingOES has been limited to qualitative analysis. In the disclosure herein,a method for normalized OES measurements in real time employing a singlechannel of the spectrometer is discussed, in an embodiment. Thenormalized OES measurement may account for the drift due to aging in thesystem and the changes in the optical path due to confinement ringposition. In another embodiment, a method for normalized OESmeasurements in real time employing a multi-channel spectrometer withexternal calibration measurements is discussed. The spectrometer andoptical efficiency factors may be calibrated off-line with theaforementioned calibration methods. In an embodiment, the opticalemission spectra may be measured and normalized to remove the variationsassociated with the optical collection efficiency of the measurementsystem. As may be appreciated from the foregoing, the aforementionedmethods may facilitate quantitative analyses of normalized OES spectrumin real time across different processing chambers.

The features and advantages of the present invention may be betterunderstood with reference to the figures and discussions (with prior artmechanisms and embodiments of the invention contrasted) that follow.

FIG. 1 shows, in accordance with an embodiment of the invention, asimplified schematic of a normalized Optical Emission Spectroscopy (OES)setup in a typical plasma processing system for optical interrogation ofplasma.

In the implementation of FIG. 1, the optical interrogation of plasma 104in an etch chamber 102 may be performed to measure optical emissionspectra that may be independent of the optical efficiencies associatedwith variations in the measurement system. In an embodiment, etchchamber 102 may be configured with an optional confinement ring assembly134. Furthermore, etch chamber 102 may be configured with twodiametrically opposing quartz windows through which plasma 104 may bevisible, in an embodiment. In an example, etch chamber 102 may beconfigured with a first quartz window 118 on an illumination side and asecond quartz window 128 on a collection side.

As the term is employed herein, the illumination side may be the side ofthe etch chamber that may be configured with an external light source todeliver light source through first quartz window 118. Whereas, thecollection side may be the side of the etch chamber that opticalemission spectra associated with plasma discharged may be measured by aspectrometer through second quartz window 128.

In an embodiment, a plurality of collimated optical assemblies, e.g., afirst collimator 116 and a second collimator 126, may be employed tocouple the two quartz windows to etch chamber 102. In an example, quartzwindow 118 may be coupled to the illumination side of etch chamber 102with first collimator 116. Similarly, quartz window 128 may be coupledto the collection side of etch chamber 102 with second collimator 126.

In an embodiment, the collimated optical assemblies, coupled at eachquartz windows, may be configured with converging and/or divergingoptics (not shown to simplify illustration) that may have pre-determinedangular acceptance for fiber optic coupling.

For example on the illumination side, the light signal from an externallight source, i.e., a flash lamp 106, may be delivered into etch chamber102 via a first fiber optic bundle 108, in an embodiment. Fiber opticbundle 108 may also be referred to as an illumination fiber optic bundle108, herein. The flash lamp 106 may be, but not limited to, a Xenonflash lamp capable of delivering a high-intensity, short-pulse lightbeam 120. The illumination fiber optic bundle 108 may be configured tocouple at a first end to flash lamp 106 and to couple at a second end toquartz window 118 via an optical coupler 114, in an embodiment.

In the implementation of FIG. 1, the light signal 120 being deliveredvia illumination fiber optic bundle 108 into etch chamber 102 may becollimated through collimator 116. In an embodiment, the intensity oflight signal 120 may be several orders of magnitude higher in intensityrelative to plasma 104, resulting in high signal to noise ratio. Thelight signal 120 and the optical emission spectra of plasma 104 may becollimated through collimator 126 to be transmitted to a signal channel130 of multi-channel spectrometer 150 via a second fiber optic bundle112, in an embodiment. Fiber optic bundle 112 may be referred to as acollection fiber optic bundle 112, herein.

On the collection side, collection fiber optic bundle 112 may beconfigured to couple at a first end to quartz window 128 via an opticalcoupler 124 and to couple at a second end to the signal channel 130 ofmulti-channel spectrometer 150, in an embodiment. The optical emissionspectra of plasma 104 and/or light signal 120 from etch chamber 102 maybe collected and delivered via collection fiber optic bundle 112 tosignal channel 130 on multi-channel spectrometer 150 for measurement, inan embodiment. In an embodiment, signal channel 130 may be, but notlimited to, a charged-coupled device (CCD). Thus, signal channel 130 maybe configured to measure the transmitted signal(s) from etch chamber102.

In the implementation of FIG. 1, light signal from flash lamp 106 may bedirectly collected and transmitted via a third fiber optic bundle 110 tobe measured on a reference channel 132 on multi-channel spectrometer150, in an embodiment. Fiber optic bundle 110 may be referred to as areference fiber optic bundle 110, herein. Thus, reference channel 132may be configured to measure the output per pulse of flash lamp 106.

As may be appreciated from the foregoing, the normalized OES setup ofFIG. 1, in contrast to prior art, may be configured with an externalflash lamp and a multi-channel spectrometer to facilitate method(s), asdetailed below, to collect and measure in-situ optical emission spectrathat may be independent of optical collection efficiencies associatedwith the measurement system. By employing the multi-channelspectrometer, measurements of transmitted light from etch chamber and/orflash lamp output per pulse may be made simultaneously to enablenormalization of optical emission spectra.

As aforementioned, the measurement system may contain a plurality ofoptical collection efficiencies that may contribute to variability inOES measurements. The optical collection efficiencies may be decoupledand quantified for normalized OES measurements. Referring to FIG. 1, theoptical coupling factors of interest in the normalized OES setup are asfollows:

C_(LR): coupling of flash lamp 106 output into reference channel fiberoptic bundle 110,

C_(LS): coupling of flash lamp 106 output into signal channel fiberoptic bundle 108,

C*_(FL): fiber optic transmittance of illumination segment 108(*—changes over time),

C*_(FR): fiber optic transmittance of reference segment 110 (*—changesover time),

C*_(FC): fiber optic transmittance of collection segment 112 (*—changesover time),

C_(R): coupling efficiency and detector sensitivity of reference channel132 of multi-channel spectrometer,

C_(S): coupling efficiency and detector sensitivity of signal channel130 of multi-channel spectrometer,

C**_(C): coupling efficiency of collimator assembly 126, quartz window128 transmittance, and confinement ring 134 transmittance at collectionviewport (**—changes a lot over time and during a process), and

C**_(L): coupling efficiency of collimator assembly 116, quartz window118 transmittance, and confinement ring 134 transmittance atillumination viewport (**—changes a lot over time and during a process).

In an embodiment, the fixed coupling factors may be determined byemploying two off-line calibration measurements. FIG. 2 shows, inaccordance with an embodiment of the invention, a simplified schematicof a first calibration setup 200 employing a calibrated light source.

In the implementation of FIG. 2, the calibration may employ a calibratedlight source 206 to determine coupling factor(s) C_(S) and/or C_(FC), inan embodiment. The calibrated light source 206 may be measured by signalchannel 130 of multi-channel spectrometer, in an embodiment of theinvention. The output of calibrated light source 206, I_(G), may bemeasured as spectrum L_(GS) on signal channel 130. Coupling factor(s)C_(S) and/or C_(FC) may be determined as follows:

L _(GS) =C _(FC) C _(S) I _(G)  (equation 1),

where L_(GS) is the measured spectrum, I_(G) is the known output of thecalibrated light source, C_(S) is the coupling efficiency and detectorsensitivity of the signal channel of multi-channel spectrometer, andC_(FC) is the fiber optic transmittance of collection segment 112.

In the implementation of FIG. 2, the determination of C_(FC) forcollection fiber optic bundle 112 may be optional, in an embodiment. Ifthe calibration includes the determination of C_(FC), collection fiberoptic bundle 112 may be shipped together with signal channel 130 of themulti-channel spectrometer as a matched pair, in an embodiment.

Referring to FIG. 2, L_(GS) and I_(G) may be known values. However,L_(GS) and I_(G) may not necessary be absolute values. In an embodiment,L_(GS) may be relative to a golden spectrometer designated by themanufacturer. I_(G) may be relative to a standard from NationalInstitute of Standards and Technology (NIST). In an embodiment, thecalibration may be performed off-line once at the manufacturer todetermine the coupling factors C_(S) and/or C_(FC), prior to shipping toa customer.

As the term is employed herein, a golden spectrometer may be a specificspectrometer designated by the spectrometer manufacturer as nominallyrepresentative of a class of spectrometers that may be manufactured bythe manufacturer. Thus, subsequent manufactured spectrometers may becalibrated against the golden spectrometer.

FIG. 3 shows, in accordance with an embodiment of the invention, asimplified schematic of a second calibration setup 300 employing astandard light source.

In the implementation of FIG. 3, the calibration may employ a standardlight source 306 to determine coupling factors C_(R), C_(S), C_(FR),C_(FL), C_(LR) and/or C_(LS), in an embodiment. The calibration mayemploy standard light source 306 that may be measured by both signalchannel 130 and reference channel 132 of the multi-channel spectrometer,in an embodiment of the invention. The output of standard light source306, I_(S), may be measured as spectrum L_(GSA) on signal channel 130and spectrum L_(GRA) on reference channel 132. Coupling factors C_(R),C_(S), C_(FR), C_(FL), C_(LR) and/or C_(LS) may be determined asfollows:

L _(GRA) =C _(LR) C _(FR) C _(R) I _(S)  (equation 2),

L _(GSA) =C _(LS) C _(FL) C _(S) I _(S)  (equation 3),

where L_(GRA) is the measured spectrum on reference channel 132, L_(GSA)is the measured spectrum on signal channel 130, I_(S) is the output ofthe standard light source, C_(S) is the coupling efficiency and detectorsensitivity of the signal channel of multi-channel spectrometer, C_(R)is the coupling efficiency and detector sensitivity of the referencechannel of multi-channel spectrometer, C_(LR) is the coupling of flashlamp 306 output into reference channel fiber optic bundle 110, C_(LS) isthe coupling of flash lamp 306 output into signal channel fiber opticbundle 108, C_(FL) is the fiber optic transmittance of illuminationsegment 108, and C_(FR) is the fiber optic transmittance of referencesegment 110.

In an embodiment, the calibration may be performed off-line once at themanufacturer to determine the coupling factors C_(R), C_(S), C_(FR),C_(FL), C_(LR) and/or C_(LS), prior to shipping to a customer.

In the implementation of FIG. 3, the output from standard light source306, I_(S), may not have to be a calibrated light source, in anembodiment. The light source 306 may be a flash lamp similar to theflash lamp being employed in the real time OES measurements. In anembodiment, the output cone of light from light source 306 may heconfigured to overfill fiber bundle inputs.

Referring to FIG. 3, the coupling factor C_(FR) of reference fiber opticbundle 110 may be configured to be substantially equivalent to couplingfactor C_(FL) of illumination fiber optic bundle 108, in an embodiment.For example, fiber optic bundle of reference segment 110 may bemanufactured to have equivalent length of fiber optic bundle ofillumination segment 108, in an embodiment.

To achieve equivalent length, the fiber optic bundles may bemanufactured by a plurality of methods. In an example, the fiber opticbundles may be manufactured to a predetermined length with a tighttolerance to attain fiber segment bundles of equivalent length.Alternatively, a pair of fiber optic bundles with equivalent length maybe selected in the manufacturing of a plurality of Fiber optic bundles.Each pair of fiber optic bundles may need to have equivalent length toeach other to serve as a matched pair to be selected for a spectrometer.Thus, the fiber optic bundles pair selected for each OES system may notneed to be specified to a tight tolerance that may increase cost inmanufacturing.

As may be appreciated from the foregoing, FIG. 2 and FIG. 3 shows twooff-line calibration measurements that may be performed once at themanufacturer to determine a plurality of fixed coupling factors beforeshipping calibrated OES systems to the customers in an embodiment. Sincethe calibrations of the OES systems are performed once at thespectrometer manufacturer, a device manufacturer is not burdened withtedious calibrations that may add aforementioned overheads to the devicemanufacturing cost.

FIG. 4 shows, in accordance with an embodiment of the invention, asimplified flowchart of a method 400 for normalized OES measurements inreal time employing a signal channel. FIG. 4 may be discussed inrelation to FIG. 1 and FIG. 2 to facilitate understanding.

In an example, the normalized Optical Emission Spectroscopy (OES) setupin a typical plasma processing system of FIG. 1 may be employed foroptical interrogation of plasma.

As shown in FIG. 4, a calibration spectrum L₀ may be recorded, in step402, to capture the state of the entire optical system at an initialtime in an embodiment. In the initial state, the data from thecalibration spectrum L₀ may be collected with no plasma and/or noocclusion, e.g., quartz confinement rings.

In step 404, an unprocessed substrate may be loaded into an etch chamberfor processing.

In step 406, RF power may be supplied to the etch chamber to react withgases in the chamber to strike plasma, and the processing of thesubstrate may commence. During plasma processing of the substrate,confinement rings may optionally be employed as require by the processrecipe. As may be appreciated from the following, the measured signalmay be significantly modulated due to factors such as occlusion byconfinement rings in the optical collection path.

In step 408, signals from the etch chamber may be collected with flashlamp “ON” for a minimum integration time to measure spectrum L_(A1) inan embodiment. In an example, the signals from the etch chamber mayinclude the signal from the lamp, the signal from plasma, and variousbackground noises, e.g., dark noise from the spectrometer detector.

In step 410, signals from etch chamber may be collected with flash lamp“OFF” for a minimum integration time to measure spectrum L_(A2) in anembodiment.

As the term is employed herein, the minimum integration time is theminimal time to collect the spectrum. In an embodiment, steps 408 and410 may be designed to measure the intensity of the flash lamp in realtime. In an example, the flash lamp may typically have a relativelyshort pulse width, approximately in the order of a few microseconds.However, the spectrometer may be limited by electronic circuitry capableof measuring the raw spectrum data in the order of milliseconds due tocost consideration. Although the integration time may only need to be aslong as the flash lamp pulse width, the integration time may be longerthan the flash lamp pulse width. Thus, the minimum integration time tocollect a spectrum may be the result of the cost and/or designlimitation of the electronic circuitry.

In an example, real time OES measurement may be made in strobe mode.Spectrum L_(A1) may be measured with the lamp “ON” to measuretransmittance of lamp signal, plasma emission and background noises, inan embodiment. In another embodiment, spectrum L_(A2) may be measuredwith the lamp “OFF” to measure plasma emission and background noises.Thus, the difference of spectrum L_(A1) from spectrum L_(A2), i.e.,(L_(A1)−L_(A2)), may normalize out plasma emission and background noiseto provide the measured spectrum from the lamp in real time.

As may be appreciated by the foregoing, the integration time may beminimized relative to the lamp to measure the light spectrum transmittedthrough the system and essentially remove the plasma emission and/orbackground noise. Thus, for a high signal to noise ratio of lighttransmitted from the lamp to plasma noise, a minimum integration timerelative to flash lamp pulse width and/or a high intensity a flash lamprelative to plasma intensity may be desired.

In step 412, signals may be collected from etch chamber with flash lamp“OFF” for the desired integration time to measure spectrum L_(B) in anembodiment. Spectrum L_(B) may typically be the spectra that may becollected in the prior art that essentially has a plurality ofvariations associated with the measurement.

In step 414, a normalized optimal emission spectrum L_(N) may becalculated, in an embodiment, employing equation 4 to normalize out thevariations associated with the measurement system, as follows:

L _(N) =L _(B)/((L _(A1) −L _(A2))/L _(O))^(1/2)  (equation 4),

where (L_(A1)−L_(A2))/L_(O) may be the normalized lamp spectrum in realtime relative to the calibrated spectrum without plasma and/orocclusion. Correspondingly, L_(B) may be normalized to((L_(A1)−L_(A2))/L_(O))^(1/2) to give the desired L_(N) in real time.

In step 416, the process end point may be assessed in an embodiment. Theprocess endpoint may be determined by the emission spectrum from L_(N)or other methods, such as a preset time or other methods of detectingprocess endpoint.

If the process has not reached the endpoint, real time OES measurementsmay be continued to be collected in step 418 by looping back to step 408in an embodiment. The normalized OES measurements may continue until theprocess has reached the endpoint. In an embodiment, loop 418 for steps408 through 416 is the real time OES measurements.

In step 420, the process may be stopped and plasma may be turned offwhen the process has reached the endpoint in an embodiment.

In step 422, the processed wafer may be removed from the etch chamber inan embodiment.

In step 424, the process may continue and loop back to step 404 where anew wafer may be loaded into the etch chamber. The real time OESmeasurements may be collected for the processing of another wafer.

As may be appreciated from the foregoing, normalization method 400 mayemploy only a single channel of the spectrometer without off-lineexternal calibration measurements. Although chamber-to-chamber matchingmay not be possible, measurement consistency over time is relativelyreliable. The measurement may be able to account for the drift due toaging in the system, i.e., deposition on quartz window, and the changesin the optical path due to confinement ring position.

Alternatively and/or additionally, reasonable chamber-to-chambermatching may be accomplished through careful manufacturing control ofsystem components in an embodiment. For example, the matching ofspectrometers and fiber bundles, designing of keyed attachment systems,and/or having tight tolerances may give good chamber-to-chamber resultswithout employing external calibration measurements. Thus, a relativelylow cost, normalized OES system for diagnostic purpose may be achieved.

Alternatively and/or additionally, a simple off-line calibration, e.g.,calibration method of FIG. 2, may be performed once at the spectrometermanufacturer to reduce the approximations that need to be made. Byemploying OES system with off-line calibration, method 400 may be ableto provide matched signals across different etching chambers.

FIG. 5 shows, in accordance with an embodiment of the invention, asimplified flowchart of a method 500 for normalized OES measurements inreal time employing a multi-channel spectrometer.

Consider the situation wherein, for example, the normalized OpticalEmission Spectroscopy (OES) setup in a typical plasma processing systemof FIG. 1 may be employed for optical interrogation of plasma.

In step 502, the spectrometer and optical efficiency factors may becalibrated off-line employing calibration 200 of FIG. 2 and/orcalibration 300 of FIG. 3 in an embodiment. Calibration 200 andcalibration 300 have been discussed in detail in FIG. 2 and FIG. 3respectively. The two calibrations may be performed off-line at themanufacturer prior to shipping the system.

In step 504, two calibration steps may he performed. A calibrationspectrum L_(O) may be performed, in step 504 a, to capture the state ofthe entire optical system at an initial time employing the signalchannel in an embodiment. In the initial state, the data from thecalibration spectrum L_(O) may be collected with no plasma and/or noocclusion, e.g., quartz confinement rings. In step 504 b, thecalibration spectrum L_(OO) may be performed employing the referencechannel in an embodiment.

Step 504 a and/or 504 b may not be integral to the real time OESnormalization process. However, L_(O) and/or L_(OO) may be useful todecouple the effect of aging for components such as quartz window and/orcollection fiber segment. For example, the effect of aging due todeposit on the quartz window over time may be determined by tracking theL_(O) and/or L_(OO) as a function of time.

In step 506, an unprocessed substrate may be loaded into an etch chamberfor processing.

In step 508, RF power may be supplied to the etch chamber to strikeplasma to begin the processing of the substrate. During plasmaprocessing of the substrate, confinement rings may optionally beemployed as required by the process recipe.

In step 510, the spectrum from the etch chamber may be collected withthe lamp “ON” for a minimum integration time, in step 510 a, to measurespectrum L_(A1S) employing the signal channel of the multi-channelspectrometer in an embodiment.

In step 510 b, the spectrum L_(A1R) may be collected with the lamp “ON”for a minimum integration time employing the reference channel of themulti-channel spectrometer in an embodiment.

In step 512, the spectrum from the etch chamber may be collected withthe lamp “OFF” for a minimum integration time, in step 512 a, to measurespectrum L_(A2S) employing the signal channel of the multi-channelspectrometer in an embodiment.

In step 512 b, the spectrum L_(A2R) may be collected with the lamp “OFF”for a minimum integration time employing the reference channel of themulti-channel spectrometer in an embodiment.

As aforementioned, the light signal from the flash lamp, e.g., Xenonflash lamp, may be a high-intensity, short-pulse light beam. Theintensity of the flash lamp may be several orders of magnitude higherthan the plasma emission resulting in high signal to noise ratio. Inaddition, the pulse width of the flash lamp may be relatively short,e.g., a few microseconds, in comparison to the time scale, i.e.integration time, of the electronic circuitry for capturing thespectrum. The limiting factor in the integration time, e.g., inmilliseconds, for capturing the spectrum may be the electroniccircuitry.

The spectrum L_(AS) measured on the signal channel may be determinedfrom step 510 a and step 512 a, as follows:

L _(AS) =L _(A1S) −L _(A2S)  (equation 5),

where L_(AS) may be related to the coupling factors, as follows:

L _(AS) =C _(LS) C* _(FL) C** _(L) C** _(C) C* _(FC) C _(S) I_(A)  (equation 6),

where I_(A) is the output of the flash lamp.

The spectrum L_(AR) measured on the reference channel may be determinedfrom step 510 b and step 512 b, as follows:

L _(AR) =L _(A1R) −L _(A2R)  (equation 7),

where L_(AR) may be related to the coupling factors, as follows:

L _(AR) =C _(LR) C* _(FR) C _(R) I _(A)  (equation 8).

The calculation from equation 5 and equation 7 may allow for thedecoupling of the flash lamp from the plasma emission and backgroundnoises in an embodiment.

In step 514, signals may be collected from etch chamber with flash lamp“OFF” for the desired integration time, in step 514 a, to measurespectrum L_(B) in an embodiment. Spectrum L_(B) may typically be thespectra that may be collected in the prior art that essentially has aplurality of variations associated with the measurement. The spectrumL_(B) may be represented as follows:

L _(B) =C** _(C) C* _(FC) C _(S) I _(P)  (equation 9).

As may be appreciated from the foregoing, coupling factors with “*”denotes quantities that may changes over time. The coupling factors with“*” being employed in equations 5-9 may represent instantaneous valuesfrom the process in real time, in an embodiment.

In step 516, a normalized optical emission spectrum I_(P) may becalculated, in an embodiment, employing equations 10 and 11 to normalizethe variations associated with the measurement system, as follows:

I _(P)=(C _(FC)/(C* _(FC))^(1/2))((L _(GSA) /L _(GRA))(L _(AR) /L_(AS)))^(1/2)(I _(G) /L _(GS))L _(B)  (equation 10),

I _(P)=((L _(GSA) /L _(GRA))(L _(AR) /L _(AS)))^(1/2)(I _(G) /L _(GS))L_(B)  (equation 11).

As may be appreciated by the foregoing, equation 10 may be derived fromequations 6, 8 and 9 with the assumptions as discussed herein. In anembodiment, the chamber may be configured to be symmetric resulting inC_(L) to be equivalent to C_(C). Thus, the change in C*_(L) may beassumed to be similar to the change in C*_(C) over time for a symmetricchamber.

In another embodiment, the fiber segments may be configured to beapproximately equal resulting in C_(FL) to be equivalent to C_(FR).Thus, the change in C*_(FL) may be assumed to be similar to the changein C*_(FR) over time for equivalent fiber segments having similarexposure levels.

In yet another embodiment, the coupling factor C_(FC) may be approximateto be equivalent to one for the situation wherein, for example, thecollection fiber segment may be made to be very short. Furthermore, theratio of (C_(FC)/(C*_(FC))^(1/2)) may be assumed to be about one. Thus,the value I_(P) for equation 10 may be simplified to equation 11.

In step 518, the process end point may be assessed in an embodiment. Theprocess endpoint may be determined by the emission spectrum from I_(P)or other methods, such as a preset time or other methods of detectingprocess endpoint.

If the process has not reached the endpoint, real time OES measurementsmay be continued to be collected in step 520 by looping back to step 510in an embodiment. The normalized OES measurements may continue until theprocess has reached the endpoint. In an embodiment, loop 520 for steps510 through 518 is the real time OES measurements.

In step 522, the process may be stopped and plasma may be turned offwhen the process has reached the endpoint in an embodiment.

In step 524, the processed wafer may be removed from the etch chamber inan embodiment.

In step 526, the process may continue and loop back to step 506 where anew wafer may be loaded into the etch chamber. The real time OESmeasurements may be collected for the processing of another wafer.

Thus, the normalization method 500 may employ OES setup as shown in FIG.1 and off-line external calibration measurements as discussed in FIG. 2and FIG. 3 to measure and derive normalized optical emission spectrumI_(P) in real time. The normalized optical emission spectra areindependent of the optical collection efficiencies associated with themeasurement system.

As can be appreciated from the foregoing, one or more embodiments of theinvention provide for a plasma processing system with the capability tofacilitate quantitative comparison of optical emission spectra acrossmultiple chambers in a manufacturing facility by employing real time OESmeasurements. Furthermore, the normalized spectra may be utilized tobuild process control and/or fault detection capabilities.

While this invention has been described in terms of several preferredembodiments, there are alterations, permutations, and equivalents, whichfall within the scope of this invention. Although various examples areprovided herein, it is intended that these examples be illustrative andnot limiting with respect to the invention.

Also, the title and summary are provided herein for convenience andshould not be used to construe the scope of the claims herein. Further,the abstract is written in a highly abbreviated form and is providedherein for convenience and thus should not be employed to construe orlimit the overall invention, which is expressed in the claims. litheterm “set” is employed herein, such term is intended to have itscommonly understood mathematical meaning to cover zero, one, or morethan one member. It should also be noted that there are many alternativeways of implementing the methods and apparatuses of the presentinvention. It is therefore intended that the following appended claimsbe interpreted as including all such alterations, permutations, andequivalents as fall within the true spirit and scope of the presentinvention.

1-20. (canceled)
 21. A processing system for in-situ opticalinterrogation of plasma emission to quantitatively measure normalizedoptical emission spectra, said processing system comprising: at least aplasma processing chamber having a confinement ring assembly and a setof quartz windows; a flash lamp; a plurality of collimated opticalassemblies, said plurality of collimated optical assemblies areoptically coupled to said set of quartz windows, wherein said pluralityof collimated optical assemblies configured to couple said set of quartzwindows to said processing chamber; a plurality of fiber optic bundles,said plurality of fiber optic bundles comprise at least an illuminationfiber optic bundle, a collection fiber optic bundle, and a referencefiber optic bundle; and a multi-channel spectrometer, said multi-channelspectrometer is configured with at least a signal channel and areference channel, said signal channel is optically coupled to at leastsaid flash lamp, said set of quartz windows, said set of collimatedoptical assemblies, said illuminated fiber optic bundle, and saidcollection fiber optic bundle to measure a first signal.
 22. Theprocessing system of claim 21 wherein said flash lamp is ahigh-intensity, short-pulse light source.
 23. The processing system ofclaim 21 wherein said flash lamp is a Xenon flash lamp.
 24. Theprocessing system of claim 21 wherein said set of quartz windows isconfigured with at least a first quartz window and a second quartzwindows, said first quartz windows is configured diametrically oppositesaid second quartz window.
 25. The processing system of claim 21 whereinsaid reference channel is optically couple to at least said flash lampand said reference fiber optic bundle to measure a second signal. 26.The processing system of claim 21 wherein said first signal is anemitted signal from said plasma chamber.
 27. The processing system ofclaim 25 wherein said second signal is an output per pulse from saidflash lamp.
 28. The processing system of claim 21 wherein saidillumination fiber optic bundle is configured to have an equivalentlength to said reference fiber optic bundle.
 29. The processing systemof claim 21 wherein said collection fiber optic bundle and said signalchannel of said multi-channel spectrometer are a matched pair, saidmatched pair may be performed by a first off-line calibration method.30. A plasma processing system for in-situ optical interrogation ofplasma emission employing an Optical Emission Spectroscopy (EOS)arrangement to quantitatively measure normalized optical emissionspectra in a plasma chamber, said plasma processing system comprising:means for performing a plurality of initial calibrations, wherein saidperforming configured to employ at least one of a signal channel on amulti-channel spectrometer and a reference channel on said multi-channelspectrometer; means for performing a first set of optical interrogationsfor a minimum integration time with a flash lamp in an ON stateemploying at least one of said signal channel on said multi-channelspectrometer and said reference channel on said multi-channelspectrometer; means for performing a second set of opticalinterrogations for said minimum integration time with said flash lamp inan OFF state employing at least one of said signal channel on saidmulti-channel spectrometer and said reference channel on saidmulti-channel spectrometer; means for performing a third set of opticalinterrogations for a desired integration time with said flash lamp insaid OFF state employing said signal channel on said multi-channelspectrometer; and means for calculating a normalized optical emissionspectra.
 31. The plasma processing system of claim 30 wherein said EOSarrangement is configured with at least said flash lamp; a set of quartzwindows; a plurality of collimated optical assemblies; a plurality offiber optic bundles, said plurality of fiber optic bundles comprises atleast an illumination fiber optic bundle, a collection fiber opticbundle, and a reference fiber optic bundle; and said multi-channelspectrometer, said multi-channel spectrometer is configured with atleast said signal channel and said reference channel.
 32. The plasmaprocessing system of claim 31 wherein said flash lamp is ahigh-intensity, short-pulse light source.
 33. The plasma processingsystem of claim 31 wherein said flash lamp is a Xenon flash lamp. 34.The plasma processing system of claim 31 wherein said set of quartzwindows is configured with at least a first quartz window and a secondquartz windows, said first quartz windows is configured diametricallyopposite said second quartz window.
 35. The plasma processing system ofclaim 31 wherein said illumination fiber optic bundle is configured tohave an equivalent length to said reference fiber optic bundle.
 36. Theplasma processing system of claim 31 wherein said collection fiber opticbundle and said signal channel of said multi-channel spectrometer are amatched pair.
 37. The plasma processing system of claim 36 furthercomprising a light source to measure a plurality of couplingcoefficients as part of off-line calibration to ascertain said matchedpair.
 38. In a plasma processing system, a method for in-situ opticalinterrogation of plasma emission employing an Optical EmissionSpectroscopy (EOS) arrangement to quantitatively measure normalizedoptical emission spectra in a plasma chamber, said method comprising:performing a first set of optical interrogations for a minimumintegration time with a flash lamp in an ON state employing a signalchannel on a multi-channel spectrometer; performing a second set ofoptical interrogations for said minimum integration time with said flashlamp in an OFF state employing said signal channel on said multi-channelspectrometer; performing a third set of optical interrogations for adesired integration time with said flash lamp in said OFF stateemploying said signal channel on said multi-channel spectrometer; andcalculating a normalized optical emission spectra.
 39. The method ofclaim 38 wherein said EOS arrangement is configured with at least aplurality of collimated optical assemblies, a plurality of fiber opticbundles, said plurality of fiber optic bundles comprises at least anillumination fiber optic bundle, a collection fiber optic bundle, and areference fiber optic bundle, and said multi-channel spectrometer, saidmulti-channel spectrometer is configured with at least said signalchannel and said reference channel.
 40. The method of claim 39 whereinsaid flash lamp is a high-intensity, short-pulse light source.